Author/Authors :
M.D.، Dawson, نويسنده , , H.D.، Sun, نويسنده , , J.C.L.، Yong, نويسنده , , J.M.، Rorison, نويسنده , , M.، Othman, نويسنده , , K.A.، Williams, نويسنده ,
Abstract :
The gain and dynamic behaviour of InGaAsN quantum well (QW) lasers is investigated. A comparison of simulated material gain of 1300 nm InGaAsN, AlGaInAs and InGaAsP quantum wells is made to gauge its gain performance. The small-signal modulation characteristics of a 250 (mu)m MQW ridge waveguide (RWG) InGaAsN laser are presented and hightemperature characteristics are shown.
