Title of article :
Characterization of ZnO films prepared by reactive sputtering at different oxygen pressures
Author/Authors :
B Amrani، نويسنده , , S Hamzaoui، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Abstract :
The piezoelectric qualities of ZnO films are characterized by their high resistivity and polycrystalline structure which is preferentially textured in perpendicular to the substrate, both of them were studied as a function of sputtering parameters. This paper deals with the formation of ZnO thin films successfully deposited onto glass substrate by sputtering. The films feature plane (0 0 2) preferential orientation. The effects of the sputtering pressure, sputtering power and sputtering in an O2+Ar gas mixture on the preferential orientation of the ZnO films are studied. The results show that a lower sputtering pressure is conducive to the formation of the (0 0 2) plane.
Keywords :
ZNO , sputtering , Preferential orientation
Journal title :
CATALYSIS TODAY
Journal title :
CATALYSIS TODAY