Effect of oxygen pressure on electrical transport properties for (110) oriented La2/3Sr1/3MnO3 films directly deposited on silicon

La2/3Sr1/3MnO3 films with (110) preferred orientation were deposited on Si (100) substrate without any buffer layer by pulsed laser deposition technique. Effect of oxygen pressure on orientation, surface morphology, and electrical transport properties were investigated. The film deposited at 10 Pa presented (110) preferred orientation with the best crystalline quality, the largest grain size, and the smallest roughness. The (110) oriented film presented higher metal-insulator transition temperature, and the lower resistivity than that of the samples without preferred orientation.