Study of crystallization process of Eu doped SrGa2S4 thin film phosphors by two electron beams evaporation and 355 nm Nd:YAG laser-annealing

In this study, the detailed crystallization mechanism of SrGa2S4: Eu2+ thin film phosphors annealed by Nd:YAG laser (355 nm) was examined. Using the spectral transmittance measurements of SrS and Ga2S3 thin films, the influence of temperature on SrGa2S4 thin film formation by laser irradiation was investigated using the thermal conducting equation. From the calculation, it is thought that Ga2S3 absorbed greater laser energy than SrS and generated the heat. By diffusing heat throughout the thin film, crystallization was promoted.