Model For The Oxide Thickness Dependence Of SILC Generation Based On Anode Hole Injection Process

A new model for the oxide thickness dependence of the SILC generation has been proposed on the basis of defects created by anode hole injection. This model which has been validated on oxides with thickness down to ~3nm, allows the explanation of the bell-shaped behavior of the SILC variation with oxide thickness and predicts a strong reduction of the SILC intensity for ultra thin oxides operated in the direct tunneling regime. © 1999 Elsevier Science Ltd. All rights reserved.