Title of article
HBM and TLP ESD robustness in smart-power protection structures
Author/Authors
Meneghesso، G. نويسنده , , Zanoni، E. نويسنده , , Santirosi، S. نويسنده , , Novarini، E. نويسنده , , Contiero، C. نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
-838
From page
839
To page
0
Abstract
In this paper we will present data concerning the ESD robustness of smart power protection structures (BCD technology) for input-output circuits. A comparison between the robustness of "p-body" and "p-well" based structures and a study of the influence of layout parameters on the ESD robustness will be given. The correlation between ESD robustness obtained with different test methods (HBM and TLP) will be also presented. © 1999 Elsevier Science Ltd. All rights reserved.
Keywords
Electromigration , Microstructural analysis , Aluminum alloys , Resistance measurements
Journal title
MICROELECTRONICS RELIABILITY
Serial Year
1999
Journal title
MICROELECTRONICS RELIABILITY
Record number
13017
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