• Title of article

    HBM and TLP ESD robustness in smart-power protection structures

  • Author/Authors

    Meneghesso، G. نويسنده , , Zanoni، E. نويسنده , , Santirosi، S. نويسنده , , Novarini، E. نويسنده , , Contiero، C. نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1999
  • Pages
    -838
  • From page
    839
  • To page
    0
  • Abstract
    In this paper we will present data concerning the ESD robustness of smart power protection structures (BCD technology) for input-output circuits. A comparison between the robustness of "p-body" and "p-well" based structures and a study of the influence of layout parameters on the ESD robustness will be given. The correlation between ESD robustness obtained with different test methods (HBM and TLP) will be also presented. © 1999 Elsevier Science Ltd. All rights reserved.
  • Keywords
    Electromigration , Microstructural analysis , Aluminum alloys , Resistance measurements
  • Journal title
    MICROELECTRONICS RELIABILITY
  • Serial Year
    1999
  • Journal title
    MICROELECTRONICS RELIABILITY
  • Record number

    13017