Title of article :
Mn1−xFexIn2Se4: a new layered semiconductor system Original Research Article
Author/Authors :
V. Sagredo، نويسنده , , Rosalie T. Torres، نويسنده , , G. Attolini، نويسنده , , F. Bolzoni ، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
3
From page :
2027
To page :
2029
Abstract :
Mn1−xFexIn2Se4 compounds (x =0.1; x =0.7) were grown by the chemical vapor transport method. X-ray diffraction analysis data show that these compositions crystallize as different polytypes that belong to the hexagonal structure. The crystal symmetry of the sample with x =0.1 belongs to the space group RView the MathML source3¯m and for the sample with x=0.7 the space group is P63mc. The magnetic behavior of both samples has been investigated in the temperature range between 5 and 300 K. Spin-glass-like behavior below the freezing temperature Tf=9 K has been found for the sample with x=0.7. The sample with Fe content x=0.1 behaves as a paramagnet down to the lowest experimental measured temperature. High-temperature susceptibility data follow the Curie–Weiss law with a negative paramagnetic temperature indicating predominant antiferromagnetic interactions. Optical studies reveal that both samples (x=0.1; 0.7) are direct band gap semiconductors. The temperature dependence of the energy gap fits Varshni relation quite well.
Keywords :
Semiconductors , Crystal growth , X-ray diffraction , Magnetic properties
Journal title :
Journal of Physics and Chemistry of Solids
Serial Year :
2005
Journal title :
Journal of Physics and Chemistry of Solids
Record number :
1309178
Link To Document :
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