Title of article :
Memory effect in MIS structures with amorphous silicon nanoparticles embedded in ultra thin image matrix Original Research Article
Author/Authors :
D. Nesheva، نويسنده , , N. Nedev، نويسنده , , E. Manolov، نويسنده , , I. Bineva، نويسنده , , H. Hofmeister، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Pages :
4
From page :
725
To page :
728
Abstract :
Metal/SiO2SiO2/a-Si-SiOxSiOx/c-Si structures containing amorphous silicon nanoparticles (a-Si NPs) embedded in ultra thin SiOxSiOx matrix are fabricated by thermal evaporation of SiOxSiOx and sputtering of SiO2SiO2 layers followed by thermal annealing at View the MathML source700∘C. A memory effect, due to charging of a-Si NPs in SiOxSiOx, is observed. The processes of NP charging and discharging are accomplished by applying pulses with alternative polarities. The observed shift of the flat band voltage of the high-frequency C–V curve caused by a voltage pulse of View the MathML source-15V having duration of 1 s is more than 3 V. In addition, the structures show good retention characteristics which make them promising for application in non-volatile memory devices.
Keywords :
D: Electrical properties , A: nanostructures , A: Electronic materials , B: Vapour deposition
Journal title :
Journal of Physics and Chemistry of Solids
Serial Year :
2007
Journal title :
Journal of Physics and Chemistry of Solids
Record number :
1309689
Link To Document :
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