Author/Authors :
Yoichi Yamada، نويسنده , , Hiroyuki Yamamoto، نويسنده , , Hironori Ohba، نويسنده , , Masato Sasase، نويسنده , , Fumitaka Esaka، نويسنده , , Kenji Yamaguchi، نويسنده , , Haruhiko Udono، نويسنده , , Shin-ichi Shamoto، نويسنده , , Atsushi Yokoyama، نويسنده , , Kiichi Hojou، نويسنده ,
Abstract :
By means of thermal neutron irradiation on nanostructure fabricated from 30Si-enriched material, the nanoregion can be selectively and homogeneously doped with 31P owing to the nuclear transmutation of 30Si→31P (local neutron transmutation doping, NTD). In order to demonstrate the capability of local NTD, 30Si-enriched silicon film is fabricated on p-Si(1 0 0) and irradiated by thermal neutrons. Upon the irradiation, film is n-doped while the substrate remains p-type, resulting in a formation of a p–n junction at film–substrate interface showing a rectification. This suggests strong possibility for application of the NTD for nano-scaled semiconductor devices.
