Structure and electronic properties of hydrogenated amorphous GaP

Hydrogenated amorphous GaP films have been prepared by reactive rf sputtering. Infrared spectroscopy, optical transmission and reflection, photothermal deflection spectroscopy and dc conductivity have been studied to investigate the local bonding configurations, the optical absorption edges and the temperature dependence of the conductivity as a function of hydrogen content. The results are discussed and compared with the effects of hydrogenation on amorphous Si.