Title of article :
Physics of amorphous conducting oxides
Author/Authors :
Robertson، نويسنده , , John، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Pages :
5
From page :
2791
To page :
2795
Abstract :
The nature of ionic amorphous oxide semiconductors such as In2O3, SnO2 and ZnO is contrasted with covalent amorphous semiconductors such as a-Si. The oxides have s-like conduction bands which leads to smaller effects of disorder, high electron mobilities, ability to move the Fermi level into the conduction band, and a lack of electrical instability due to bond breaking.
Keywords :
Thin film transistors , Ab initio , Stannates , Short-range order , Tin oxide , band structure
Journal title :
Journal of Non-Crystalline Solids
Serial Year :
2008
Journal title :
Journal of Non-Crystalline Solids
Record number :
1382894
Link To Document :
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