Substrate effects of ZnO thin films prepared by PLD technique

ZnO thin films are prepared on the glass, GaAs (100), Si(111), and Si(100) substrates at different temperatures by the pulsed laser deposition (PLD) method. X-ray diffraction (XRD) measurements indicate that the substrate temperatures of 200–500, 200–500, 300–500, and 300–500 °C are the optimized conditions of crystalline for the glass, GaAs (100), Si (111), and Si (100) substrates, respectively. In spite of the films deposited on the different substrates, the films always show (002) orientation at the optimized conditions. Photoluminescence (PL) results indicate that the thin films fabricated at the optimized conditions show the intense near band PL emissions. The optimized conditions for PL are 500, 500, 400–500, and 500 °C for glass, GaAs (100), Si (111), and Si (100) substrates, respectively.