Title of article :
NiO thin-film formaldehyde gas sensor
Author/Authors :
Dirksen، نويسنده , , James A. and Duval، نويسنده , , Kristin and Ring، نويسنده , , Terry A.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Abstract :
The suitability of both pure and Li-doped NiO as a thin-film resistive gas sensor for formaldehyde has been investigated. Pure NiO had a linear formaldehyde sensitivity of 0.825 mV ppm−1 while that for 0.5 at.% Li-doped NiO was 0.488 mV ppm−1 at 600°C. These gas-sensing materials also showed similar sensitivity for methanol and acetone as well as a reduced sensitivity for toluene and ethanol. Chloroform was a poison for these gas-sensing materials. Due to resistive noise, the detection limit for formaldehyde was found to be ≈40 ppm.
Keywords :
Formaldehyde sensor , Oxide semiconductor , thin-film , Nickel oxide
Journal title :
Sensors and Actuators B: Chemical
Journal title :
Sensors and Actuators B: Chemical