Title of article :
Solar cells based on the heterojunction a-C/p-Si
Author/Authors :
Baranov، نويسنده , , A.M. and Malov، نويسنده , , Y.A. and Zaretsky، نويسنده , , D.F. and Tereshin، نويسنده , , S.A.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Abstract :
The heterostructure n-CdO/a-C/p-Si is proposed for use as a solar cell device. The heterostructure consists of two semiconductor layers having different optical band gaps. An ultrathin layer of a-C with a narrow optical band gap is located between these layers. The photovoltaic effect in this device has been investigated. It is shown that the short-circuit current Isc=46 mA/cm2 for heterostructure n-CdO/a-C/p-Si corresponds to the values obtained in the best solar cells based on crystalline silicon. It is also shown that the heterostructure n-CdO/p-Si (without a-C) has a short circuit current which is much weaker.
Keywords :
Optical bandgaps , solar cells , Heterojunction
Journal title :
Solar Energy Materials and Solar Cells
Journal title :
Solar Energy Materials and Solar Cells