Author/Authors :
Hashimoto، نويسنده , , A and Kitano، نويسنده , , T and Nguyen، نويسنده , , A.K and Masuda، نويسنده , , A and Yamamoto، نويسنده , , A and Tanaka، نويسنده , , S and Takahashi، نويسنده , , M and Moto، نويسنده , , A and Tanabe، نويسنده , , T and Takagishi، نويسنده , , S، نويسنده ,
Abstract :
First systematic Raman scattering characterization for the nearly lattice-matched GaInAsN layers has been discussed to investigate the local structural changes as the In and the N compositions increase. It has been found that the formation of the spontaneously ordered clusters in the GaInNAs layers strongly depends on the In incorporation, and the degradation mechanism of the crystal quality of GaInAsN with the high In and N compositions may be completely different from the GaAsN systems.
