Title of article :
Photo-induced current transient spectroscopic study of the traps in CdTe
Author/Authors :
Mathew، نويسنده , , Xavier، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
18
From page :
225
To page :
242
Abstract :
Photo-induced current transient spectroscopy is an efficient technique for the detection and identification of traps in semiconductors. This technique has been used to determine the traps in various semiconductors. CdTe is one of the leading candidates for the development of thin film solar cells; hence, the detection of trap levels in CdTe is of interest for the photovoltaic researchers. In this review special emphasis is given to the photo-induced current transient spectroscopy (PICTS) technique applied in the case of CdTe. The PICTS technique, theory as well as a collection of the majority of the traps in CdTe reported in the literature are presented.
Keywords :
traps , Deep levels , Shallow levels , CdTe , Picts
Journal title :
Solar Energy Materials and Solar Cells
Serial Year :
2003
Journal title :
Solar Energy Materials and Solar Cells
Record number :
1478612
Link To Document :
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