Nanocrystalline silicon thin films deposited by high-frequency sputtering at low temperature

Intrinsic and n-type hydrogenated nanocrystalline silicon thin films (nc-Si:H) were deposited at a temperature as low as 95 °C by high-frequency (HF) sputtering, with hydrogen dilution percentage varying from 31% to 73%. In order to study the properties of the films prepared by this method, the samples were examined by infrared absorption spectroscopy (IR), X-ray diffraction (XRD), SEM, spectroscopic ellipsometry (SE), laser Raman spectrometry and atomic force microscopy (AFM). XRD measurements showed that this film has a new microstructure, which is different from the films deposited by other methods. In addition, an n-type nc-Si:H/p-type c-Si heterojunction solar cell, which has an open circuit voltage (Voc) of 370 MV and a short-circuit current intensity (Jsc) of 6.5 mA/cm2, was produced on the nanocrystalline silicon thin film. After 10 h light exposure under AM1.5 (100 MW/cm2) light intensity at room temperature, radiation degradation has not been found for the device.