Title of article :
Some characteristics in the interaction of slow highly charged Iq+ ions with a Si(1 1 1) 1 × 1-H surface
Author/Authors :
Tona، نويسنده , , Masahide and Nagata، نويسنده , , Kazuo and Takahashi، نويسنده , , Satoshi N. Nakamura، نويسنده , , Nobuyuki and Yoshiyasu، نويسنده , , Nobuo and Sakurai، نويسنده , , Makoto and Yamada، نويسنده , , Chikashi and Ohtani، نويسنده , , Shunsuke، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2006
Pages :
9
From page :
124
To page :
132
Abstract :
We have observed secondary particles and photons emitted from hydrogen terminated Si(1 1 1) 1 × 1 surfaces in the interactions with highly charged ions (HCIs) of iodine having a wide range of charge state, q, from I17+ up to I53+, fully stripped iodine ion. A TOF-SIMS (time-of-flight secondary ion mass spectrometry) apparatus has been used to investigate secondary emissions where protons are dominant signals in the TOF spectra. Measured yields of H+ and H 2 + show strong q-dependences, proportional to q3.4 and q5, respectively. For Si+, while the yield remains constant for q < ∼ 25, it begins increasing with q1.4 at higher q (∼25). The mechanism of secondary emissions is briefly discussed.
Keywords :
Highly charged ion , HCI , SIMS , Potential sputtering
Journal title :
Surface Science
Serial Year :
2006
Journal title :
Surface Science
Record number :
1697471
Link To Document :
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