Title of article :
Quantum conductance of In nanowires on Si(1 1 1) from first principles calculations
Author/Authors :
Wippermann، نويسنده , , S. and Schmidt، نويسنده , , W.G. and Calzolari، نويسنده , , A. and Nardelli، نويسنده , , M. Buongiorno and Stekolnikov، نويسنده , , A.A. and Seino، نويسنده , , K. and Bechstedt، نويسنده , , F.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2007
Abstract :
The quantum conductance of the paradigmatic quasi-one-dimensional In/Si(1 1 1) surface system is calculated for 4 × 1, 4 × 2 and 8 × 2 surface reconstructions. In agreement with experiment, we find the recently suggested formation of hexagons within the In nanowires [C. Gonzalez, F. Flores, J. Ortega, Phys. Rev. Lett. 96 (2006) 136101] to drastically modify the electron transport along the In chains. In contrast, the formation of trimers barely changes the quantum conductance.
Keywords :
electron transport , Density functional calculations , Silicon surface , In nanowires
Journal title :
Surface Science
Journal title :
Surface Science
