Author/Authors :
Yoo، نويسنده , , Jae Beom and Park، نويسنده , , Sang-Wook and Kang، نويسنده , , Ha Na and Mondkar، نويسنده , , Hemant S. and Sohn، نويسنده , , Kyunghwa and Kim، نويسنده , , Hyun Mi and Kim، نويسنده , , Ki-Bum and Lee، نويسنده , , Haiwon، نويسنده ,
Abstract :
A new photoacid generator (PAG) bound polymer containing triphenylsulfonium salt methacrylate (TPSMA) was synthesized and characterized. The PAG bound polymer was employed to improve electron beam lithographic performance, including sensitivity and resolution. The PAG bound polymer resist exhibited a higher sensitivity (120 μC/cm2) than the PAG blend polymer resist (300 μC/cm2). Eliminating the post exposure baking process during development improved the resolution due to decreased acid diffusion. A high-resolution pattern fabricated by electron beam lithography had a line width of 15 nm and a high aspect ratio. The newly developed patterns functioned well as masks for transferring patterns on Si substrates by reactive ion etching.
