Abstract :
Optimal conditions for the growth of eptiaxial quality layers of ferroelectric Ba2Bi4Ti5O18 films, by pulsed laser ablation have been determined. The ferroelectric layer was deposited on a stack of buffer layers comprising LaNiO3/CeO2/YSZ. All the layers in the buffer stack were deposited by excimer laser ablation as well. Films on large area Si(100) wafers, 3 inches in diameter showed good thickness and compositional uniformity. The quality of epitaxy of the oriented films was studied with the help of X-ray diffraction, scanning force microscopy (SFM) and cross-section transmission electron microscopy (XTEM) techniques. Ferroelectric hysteresis loops were recorded with values of Ps and Pr of 1.3 μC/cm2 and 0.6 μC/cm2, respectively.
