Abstract :
We have studied the properties of the in-gap states of the intermediate valence narrow-gap semiconductor SmB6 by means of electrical conductivity and specific heat measurements at temperatures between 0.1 and 15 K. The electrical conductivity results imply that the residual conductivity of SmB6 which is observed below 3 K is non-activated and the corresponding state, which is formed within the impurity dependent in-gap states, has a metallic-like nature. The heat capacity measurements confirm the metallic-like properties of the in-gap states and reveal, moreover, an enhancement of the specific heat of SmB6 below about 2 K. The observed behaviour can be attributed to the formation of a coherent state within the metallic-like state of this compound.
