Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
6
From page
155
To page
160
Abstract
ZnS0.06Se0.94/Zn0.8Cd0.2Se quantum wells (QW) were studied by temperature-dependent photoluminescence (PL) measurement. We observed two PL peaks due to the band-to-band transition in ZnS0.06Se0.94 barrier, Eg(0)=2.819 eV, and the transition of heavy hole to first conduction subband in Zn0.8Cd0.2Se well, Ehh1(0)=2.545 eV. The relative thermal coefficients of these two constituent materials are quite different, resulting in a temperature-dependent quantum confinement. The reduction of the quantum confinement at high temperatures induces a leakage of carrier and leads to a quenching of the PL intensity. The activation energy for the PL quench is about 188.4 meV.
Journal title
Acta Tropica
Serial Year
2001
Journal title
Acta Tropica
Record number
1746986
Link To Document