Abstract :
Large-scale fabrication of semiconductor Ga2O3 nanobelts was achieved through graphite/hydrogen reduction of Ga2O3 powder. The as-synthesized Ga2O3 nanobelts are pure, structurally uniform, and single crystalline. The nanobelts exhibit a beltlike morphology and have widths ranging from several tens to several hundreds of nanometers and lengths ranging from several tens to several hundreds of micrometers. The growth mechanism of the nanobelts is discussed.
