Abstract :
We fabricated alloyed thin films consisting of (SrTiO3)1−y–(La1−xSrxMnO3)y (x=0.2–0.8, y=0.2–0.5) on LSAT (001) substrate. The alloyed film (x=0.5, y=0.5) exhibited semiconductive transport properties with an activation energy of 0.15 eV, and paramagnetic property. Judging from: (1) the decrease of resistivity caused by increasing the Sr ratio (x); and (2) the energy level of the Mn d state located near the Fermi level, it is considered that the hole concentration originating from the Mn ions is controlled by the Sr ratio (x), leading to the decrease in resistivity. Furthermore, we demonstrated rectifier behavior in the (Sr0.6La0.4)Ti0.5Mn0.5O3 (x=0.2, y=0.5)/Nb-0.01 wt% doped n-type SrTiO3 junction.
