Abstract :
We report the realization of multi-period devices in which each period consists of two-dimensional electron and hole layers whose effective distance is controlled by an external bias. The current–voltage characteristics of devices based on InAs/AlxGa1−xAsSb/Al0.1Ga0.9AsSb type-II quantum well structures show a behavior that is consistent with a predicted enhancement of the radiative recombination in this type of devices at T=77 K. We have found that increasing the number of periods and decreasing the operating temperature considerably improves the electrical performance of the devices.
