Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
5
From page :
353
To page :
357
Abstract :
The temperature dependence of bandgap energy of GaAs0.98N0.02 and Ga0.95In0.05As0.98N0.02 compounds has been analysed in order to determine the CMN matrix element of the band anticrossing model. We have found that the element equals 2.48 and 2.60 eV for GaAs0.98N0.02 and Ga0.95In0.05As0.98N0.02 layers, respectively. When the same value has been assumed for annealed layers, an increase in the energy of the resonant nitrogen level EN has been obtained. Two possible mechanisms leading to the increase in this energy are discussed in this work.
Journal title :
Acta Tropica
Serial Year :
2004
Journal title :
Acta Tropica
Record number :
1748156
Link To Document :
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