Abstract :
We have synthesized two new chalcopyrite compounds: MnGeP2 and MnGeAs2. Total energy calculations predicted that both compounds are indirect semiconductors with band gaps of 0.24 and 0.06 eV, respectively. Both compounds exhibit room-temperature ferromagnetism with TC∼320 and 340 K for MnGeP2 and MnGeAs2, respectively, based on magnetization and resistance measurements. We have also observed the anomalous Hall effect, indicating polarization of the carriers.
