Abstract :
Stannic oxide (SnO2) nanowires have been prepared by Chemical vapor deposition (CVD). The low-temperature transport properties of a single SnO2 nanowire have been studied. It is found that the transport of the electrons in the nanowires is dominated by the Efros-Shklovskii variable-range hopping (ES-VRH) process due to the enhanced Coulomb interaction in this semiconducting nanowire. The temperature dependence of the resistance follows the relation lnR∼T−1/2. On the I–V and dI/dV curves of the nanowire a Coulomb gap-like structure at low temperatures appears.
