Abstract :
Most studies on Co-doped TiO2 system were focused on thin films grown by MBE-based methods. In this work we report the ferromagnetism of nanometer-thick-layered TiO2/Co/TiO2/TiN film grown on Si substrate by conventional magnetron sputtering. For the growth of TiO2 on silicon, a non-oxide thermally stable material, TiN, was introduced to prevent Ti penetration into the Si substrate. Structural, magnetic, and transport measurements respectively by Raman, SQUID and Hall effect show that our samples are n-type semiconductors and exchange bias effect due to exchange coupling between Co and interfacial CoO. For the rapid vacuum annealed specimen, we found an enhanced loss and a Perminvar-type constricted hysteresis loop, which attributed to pinning of domain walls due to an induced anisotropy by the pair ordering in the metallic alloy of Co–Ti–Si.
