Abstract :
Measurement of electrical resistivity in the temperature range 1.5≤T≤300 K of tantalum nitride films prepared by Ion Beam Assisted deposition and pure tantalum films prepared by electron beam evaporation has been carried out. The tantalum film shows a resistivity minimum at Tm=12 K, whereas tantalum nitride shows a decrease in resistivity with an increase in temperature. An attempt has been made to explain such anomalous behavior by using existing theories.
