Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
4
From page :
89
To page :
92
Abstract :
It is experimentally shown that, by terminating dangling bonds on Si(001) with a monatomic layer of selenium, the chemical reactivity of the surface is suppressed. In the case of nickel silicidation, transmission electron microscopy (TEM) and x-ray photoelectron spectroscopy reveal that Se passivation suppresses Ni silicidation by over 100 °C as compared to the bare Si(001) surface. The formation of Ni subsilicide (Ni2Si) is not observed on Se-passivated Si(001). This interfacial silicidation appears to be linked with changes in electrical behavior of the interface between titanium and Se-passivated Si(001), which we reported previously.
Journal title :
Acta Tropica
Serial Year :
2004
Journal title :
Acta Tropica
Record number :
1748672
Link To Document :
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