Abstract :
Results of electrical resistance measurements on MgB2 at ambient temperature up to 25 GPa are presented. An abrupt reduction of nearly 30% in resistance around 18 GPa is observed. Band structure calculations in the presence of a frozen-in distortion of the E2g phonon mode reveal that one of the closed Fermi sheets corresponding to the σ-band opens along the Γ–A direction at this pressure. It is suggested that the anomaly observed in the resistance is due to this phonon mediated electronic topological transition (ETT).
