Abstract :
The capacitance–voltage (C–V) and current–voltage (I–V) characteristics of the Ti/p-Si Schottky barrier diodes (SBDs) have been investigated taking into account the effect of the interface states and series resistance of the device. The forward C–V measurements have been carried out in the range frequency of 0.3–2 MHz (at six different frequencies). It is seen that the forward C–V plots exhibit anomalous peaks in the presence of a series resistance. It has been experimentally determined that the peak positions in the C–V plot shift towards lower voltages and the peak value of the capacitance decreases with increasing frequency. In addition to, the effect of series resistance on the capacitance is found appreciable at higher frequencies due to the capacitance decreases with increasing frequency.
