Abstract :
ZnTe films were grown on (0001) sapphire substrates by the metalorganic vapor phase epitaxy (MOVPE) method. Single crystalline (111) ZnTe epitaxial layers were confirmed by x-ray diffraction, reflection high-energy electron diffraction, and cathodoluminescence measurements. Emission of THz radiation with a spectral distribution up to 40 THz was clearly observed from the ZnTe film with a thickness of 10 μm. The results show that MOVPE is a promising growth method for obtaining high-quality ZnTe epitaxial films on sapphire substrates, which paves the way for obtaining thinner ZnTe films to provide a flatter frequency response in THz device applications.
