Abstract :
The influence of strain on hole tunneling in trilayer and double barrier structures made of two diluted magnetic semiconductors (DMS) (Ga, Mn)As, separated by a thin layer of non-magnetic AlAs is investigated theoretically. The strain is caused by lattice mismatch as the whole structure is grown on a (In0.15Ga0.85)As buffer layer. The tensile strain makes the easy axis of magnetization orient along the growth direction. We found that biaxial strain has a strong influence on the tunneling current because the spin splitting at k = 0 is comparable to the Fermi energy E F . Tensile strain decreases the tunneling magnetoresistance ratio.
