Abstract :
A ZnO homojunction light emitting device was grown on n+ GaAs substrate by pulsed laser deposition. As-doped ZnO film by diffusion of As from the substrate was used for the p-type side and Al-doped ZnO film for the n-type side of the device. A distinct electroluminescence emission consisting of a dominant emission peak at ∼2.5 eV and a weak shoulder centered at ∼3.0 eV was observed at room temperature. The I – V characteristic of the ZnO homojunction showed a good rectifying behavior with a turn-on voltage of ∼4.5 V and a reverse breakdown voltage of ∼9 V.
