Abstract :
Detailed theoretical analysis of the temperature dependence of two-dimensional electron gas mobility data in GaAs1−xNx/Al0.38Ga0.62As samples ( x = 0 , 0.1% and 0.4%) shows that, as x increases, the dislocation density and the number of ionized impurities in the potential well increase by a factor of ∼ ×300 and ∼ ×500, respectively.
