Abstract :
BaTiO3 thick film with a (h00) grain orientation was fabricated by the template grain growth method. The thick film had a single phase of perovskite, with a Lotgering’s factor of as high as 86%. The ferroelectric properties of the thick film were investigated. The saturate and remnant polarizations of the grain orientated thick film were 37.3 and 14.4 μC/cm2, respectively. The temperature dependence of the dielectric constant and loss tangent were also evaluated. The Curie temperature of the thick film shifted to a high temperature as compared to that of its randomly orientated counterpart. This could be attributed to the large grain size of the grain oriented thick film. The piezoelectric properties of the thick film were characterized by the relationship of the unipolar strain and applied electric field. The piezoelectric constant d 33 ∗ of the grain oriented thick film was 154 pm/V, which was higher than that of a randomly oriented film ( d 33 ∗ = 100 pm / V ) by more than 50%.
