Abstract :
A new Cu/ n -InP Schottky junction with organic dye (PSP) interlayer has been formed by using a solution cast process. An effective barrier height as high as 0.82 eV has been achieved for Cu/PSP/ n -InP Schottky diodes, which have good current–voltage (I–V) characteristics. This good performance is attributed to the effect of formation of interfacial organic thin layer between Cu and n -InP. By using capacitance–voltage measurement of the Cu/PSP/ n -InP Schottky diode the diffusion potential and the barrier height have been calculated as 0.73 V and 0.86 eV, respectively. From the I–V measurement of the diode under illumination, short circuit current ( I s c ) and open circuit voltage ( V o c ) have been extracted as 0.33 μA and 150 mV, respectively.
