Abstract :
In situ electrical resistivity measurement of powdered Mg2Si has been performed in a diamond anvil cell up to 25.4 GPa. At about 22.2 GPa, Mg2Si underwent a pressure-induced semiconductor–metal phase transition that took place in the Ni2In-type structure rather than the anti-fluorite structure predicted theoretically. The other phases (anti-fluorite and anti-cotunnite) belong to the semiconductor phase.
