Issue Information
روزنامه با شماره پیاپی سال 2013
Pages
5
From page
53
To page
57
Abstract
Influences of the dielectric layer-induced interfacial charges on two-dimensional electron gases (2DEGs) are theoretical calculated in thin-barrier Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors (HEMTs). A decrease of 2DEG mobilities limited by three main scattering mechanisms, including misfit dislocation, threading dislocation and interface roughness scatterings, is observed with increasing value of the density of interfacial charges. The results in this article can be used to design structures to generate higher mobility in Al2O3/AlGaN/GaN double heterojunction HEMTs.
Journal title
Acta Tropica
Serial Year
2013
Journal title
Acta Tropica
Record number
1751082
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