Issue Information
روزنامه با شماره پیاپی سال 2013
Pages
4
From page
49
To page
52
Abstract
We investigate electrical gating of photoluminescence and optical absorption in monolayer molybdenum disulfide (MoS2) configured in field effect transistor geometry. We observe a hundredfold increase in photoluminescence intensity and an increase in absorption at ∼660 nm in these devices when an external gate voltage is decreased from +50 to −50 V, while the photoluminescence wavelength remains nearly constant. In contrast, in bilayer MoS2 devices we observe almost no changes in photoluminescence with gate voltage. We propose that the differing responses of the monolayer and bilayer devices are related to the interaction of the excitons in MoS2 with charge carriers.
Journal title
Acta Tropica
Serial Year
2013
Journal title
Acta Tropica
Record number
1751117
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