Title of article :
A study of the intrinsic defects in LiY F4 with extended-ion method
Author/Authors :
Li، نويسنده , , Q.F. and Chen، نويسنده , , L.F.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
5
From page :
107
To page :
111
Abstract :
The intrinsic defects in LiY F4, such as F centers, V k centers and self-trapped excitons (STEs), are studied within the extended-ion approximation. It is found that the V k center moves toward the nearby interstitial site, still keeping C 2 v symmetry. The absorption spectrum of V k comes from the optical transition ( Σ u → Π g ) of C configuration. The STE is in fact a nearest-neighbour F–H pair with C configuration, and the STE undergoes a relaxation consisting of a molecular axial transition superimposed with a rotation. Such a transition plus rotation relaxation of the STE is quite different from those in alkali halides, but there are some similarities with those in alkali-earth halides. The calculated results for the absorption of F centers, V k centers and the luminescence spectrum of self-trapped exciton (STE) are in a good agreement with experiments.
Keywords :
A. LiY F4 , D. V k center , D. F center , E. Self-trapped exciton (STE)
Journal title :
Solid State Communications
Serial Year :
2006
Journal title :
Solid State Communications
Record number :
1763481
Link To Document :
بازگشت