Author/Authors :
Liu، نويسنده , , Yan and Wang، نويسنده , , Jiqing and Xing، نويسنده , , Huaizhong and Tang، نويسنده , , Naiyun and Lv، نويسنده , , Chi-Bin and Mao، نويسنده , , Huibing and Zhao، نويسنده , , Qiang and Zhang، نويسنده , , Yong and Zhu، نويسنده , , Ziqiang، نويسنده ,
Abstract :
The authors theoretically investigate a triple-barrier ferromagnetic resonant-tunneling diode composing nonmagnetic couple wells and three GaMnN magnetic barriers, in which two kinds of antiparallel configurations are formed by changing the relative orientation of magnetization in the barriers. Based on a two-band model, the achievement of large magnetocurrents in the resonant bias regime is proposed under an optimal magnetization configuration. The magnetocurrents in both antiparallel configurations of triple-barrier system are much higher than that in double-barrier structure.
