Title of article :
Faraday rotation in indium doped single crystals
Author/Authors :
Luan، نويسنده , , Lijun and Jie، نويسنده , , Wanqi and Zhang، نويسنده , , Jijun and Li، نويسنده , , Peisen، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2009
Pages :
4
From page :
357
To page :
360
Abstract :
Faraday rotation in indium (In) doped Cd1−xMnxTe (CMT) single crystals is studied for the first time at room temperature. We extend a multioscillator model for the Faraday rotation of In doped CMT (CMT: In) by using an analytical expression for the refractive index that includes the contributions from interband transitions at the Γ , L and X points of the Brillouin zone as well as the contribution from transition caused by doping. Based on the band gap at the Γ -point in the Brillouin zone ( E 0 ) and E DA gap caused by doping, a simple energy level distribution model is put forward. Finally, the results of the PL spectra verify the existence of the E DA .
Keywords :
A. Semimagnetic semiconductors , D. Faraday rotation , D. Exchange interaction , D. Extended multioscillator model
Journal title :
Solid State Communications
Serial Year :
2009
Journal title :
Solid State Communications
Record number :
1764952
Link To Document :
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