Temperature dependence of rectification and photovoltaic effects in regioregular poly(3-alkylthiophene) films at the Schottky junction with Al electrode

Current–voltage (I–V) characteristics of regioregular (head–tail) poly(3-hexylthiophene), HT-PHT films in the sandwich cell structure of Al/HT-PHT/Au have been studied as a function of temperature. The cells showed typical rectification characteristics with the ratio of more than 103, indicating the formation of the Schottky type junction at the interface of Al/HT-PHT. The temperature dependence of I–V characteristics at the forward biases are discussed with the bulk property of the HT-PHT. The reversed current and its characteristics are discussed taking the thermionic emission and diffusion models at the junctions of Al/HT-PHT into consideration.