Title of article
Angular distributions of N2 in the photodissociation of N2O adsorbed on a partially oxidized Si(100) surface at 95 K
Author/Authors
Lee، نويسنده , , Jihwa and Kato، نويسنده , , Hiroyuki and Sawabe، نويسنده , , Kyoichi and Matsumoto، نويسنده , , Yoshiyasu، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1995
Pages
6
From page
417
To page
422
Abstract
The time-of-flight distributions of the N2 photofragment produced in the UV photodissociation of N2O adsorbed on a partially oxidized Si(100) surface at 95 K have been measured as a function of the desorption angle. Photoinduced electron transfer initiates the dissociation of N2O to produce an adsorbed oxygen atom and energetic N2 desorbing from the surface. Interestingly, the angular distribution of N2 originating from chemisorbed N2O molecules is peaked at ≈ 32° from the surface normal. The results are discussed on the basis of bonding geometry and photodissociation dynamics of N2O.
Journal title
Chemical Physics Letters
Serial Year
1995
Journal title
Chemical Physics Letters
Record number
1774167
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