Title of article :
Isolated and close-packed In0.4Ga0.6As/GaAs (311)B quantum dots
Author/Authors :
Song، نويسنده , , H.Z. and Lan، نويسنده , , S and Akahane، نويسنده , , K and Jang، نويسنده , , K.-Y and Okada، نويسنده , , Y and Kawabe، نويسنده , , M، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Abstract :
Remarkably different characteristics were found on isolated and close-packed self-assembled In0.4Ga0.6As/GaAs (311)B quantum dots (QDs). Sub-peaks superimposed on the regular Gaussian photoluminescence (PL) peak were observed in a close-packed QD array, in contrast to the single Gaussian PL peak in an isolated one. A tunneling-current peak in an isolated QD array changes into several equidistant features in a close-packed one. The possible mechanisms of the fine structures are discussed.
Keywords :
A. Nanostructures , A. Semiconductors , D. Electronic states (localized)
Journal title :
Solid State Communications
Journal title :
Solid State Communications
