Title of article :
Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer
Author/Authors :
Zhang، نويسنده , , Z.Y. and Yang، نويسنده , , C.L. and Wei، نويسنده , , Y.Q. and Ye، نويسنده , , X.L. and Jin، نويسنده , , P. and Li، نويسنده , , Ch.M. and Meng، نويسنده , , X.Q. and Xu، نويسنده , , B. and Wang، نويسنده , , Z.G.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
4
From page :
391
To page :
394
Abstract :
In this report we have investigated the temperature dependence of photoluminescence (PL) from self-assembled InAs quantum dots (QDs) covered by an InAlAs/InGaAs combination layer. The ground state experiences an abnormal variation of PL linewidth from 15 K up to room temperature. Meanwhile, the PL integrated intensity ratio of the first excited state to the ground state for InAs QDs unexpectedly decreases with increasing temperature, which we attribute to the phonon bottleneck effect. We believe that these experimental results are closely related to the partially coupled quantum dots system and the large energy separation between the ground and the first excited states.
Keywords :
A. Nanostructures , D. Optical properties , A. Semiconductors
Journal title :
Solid State Communications
Serial Year :
2003
Journal title :
Solid State Communications
Record number :
1787964
Link To Document :
بازگشت